Pb Free Plating Product
ISSUED DATE  :2008/04/03
REVISED DATE :
 
 
BVDSS          20V
GTC8205A
 
GTC8205A
RDS(ON)       22m
ID              6A
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
 
Description
The GTC8205A provides the designer with the best combination of fast switching, ruggedized device design,
ultra low on-resistance and cost-effectiveness. 
 
Features
*Low on-resistance
*Capable of 2.5V gate drive
*Low drive current
 
Package Dimensions
 
 
 
 
 
 
 
Millimeter     Millimeter
REF.  REF.
Min.  Max.  Min.  Max.
-  1.20  6.20  6.60
A  E
0.05  0.15  4.30  4.50
A1  E1
0.19  0.30  0.65 BSC
b  e 
0.09  0.20  0.45  0.75
c  L
2.90  3.10  0!  8!
D  S
 
Absolute Maximum Ratings
Parameter  Symbol  Ratings  Unit
Drain-Source Voltage  V   20  V 
DS
Gate-Source Voltage  V   !12  V 
GS
3
Drain Current ,VGS@4.5V  I  @Ta=25  6  A 
D
3
Drain Current ,VGS@4.5V  I  @Ta=70  4.8  A 
D
1,
Pulsed Drain Current    I   20  A 
DM
Power Dissipation  P @Ta=25  1  W 
D
Operating Junction and Storage Temperature Range
Tj, Tstg  -55 ~ +150  
Linear Derating Factor    0.008  W/ 
 
Thermal Data
Parameter  Symbol  Value  Unit
3 
Thermal Resistance Junction-ambient  Max.  Rthj-a    125 /W