ELI501
■Features
1.Theprotection IC and The Dual-Nchannel MOSFET to use common Drain are integrated into One-packagingIC.
2.Reduced Pin-Count by fully connecting internally.
3. Application Part
1) ProtectionIC
①Uses high with stand voltage CMOS process.
-The charge rsection can be connected up to absolute maximum rating20V.
②Detection voltage precision
-Overcharge detection voltage
±60㎷(Ta=25℃)
-Overdischarge detection voltage
±110㎷(Ta=25℃)
-Discharging overcurrent detection voltage
±35㎷(Ta=25℃)
③Built-indetectiondelaytimes
-Overchargedetectiondelaytime
Typ0.08s/Max0.20s(Ta=25℃)
-Overdischargedetectiondelaytime)
Typ40㎳/Max100㎳(Ta=25℃)
-Dischargingovercurrentdetectiondelaytime)
Typ10㎳/Max30㎳(Ta=25℃)
-Shortdetectiondelaytime)
Typ5㎲/Max50㎲(Ta=25℃)
④Withabnormalchargerhasanabilitytodetectfunction
⑤0Vchargefunctionallowed
2)FET
①Using advanced trench technology to provide excellent RDS(ON),low gate charge and
operation with gate voltage aslo was 2.5V while retaininga12VVGS(MAX).
②TheprotectionforESD
③Commondrainconfiguration
④Generalcharacteristics
-VDS (V)=20V
-ID (A)=6A
-RSS(ON) <60mΩ(VGS =4.5V,ID =5A)
-ESDRating:2000VHBM
BatteryProtectSolutionIC