PSMN026-80YS
N-channel LFPAK 80 V 27.5 mΩ standard level MOSFET
Rev. 01 — 25 June 2009 Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits
„ Advanced TrenchMOS provides low
RDSon and low gate charge
„ High efficiency gains in switching
power converters
„ Improved mechanical and thermal
characteristics
„ LFPAK provides maximum power
density in a Power SO8 package
1.3 Applications
„ DC-to-DC converters
„ Lithium-ion battery protection
„ Load switching
„ Motor control
„ Server power supplies
1.4 Quick reference data
 
Table 1. Quick reference
Symbol Parameter Conditions Min Typ Max Unit
VDS drain-source voltage Tj
≥ 25 °C; Tj
≤ 175 °C - - 80 V
ID drain current Tmb =25°C; VGS =10V;
see Figure 1
--34A
Ptot total power
dissipation
Tmb = 25 °C; see Figure 2 --74W
Tj
junction temperature -55 - 175 °C
Avalanche ruggedness
EDS(AL)S non-repetitive
drain-source
avalanche energy
VGS =10V; Tj(init) =25°C;
ID =31A; Vsup ≤ 80 V;
RGS =50 Ω; unclamped
--32mJ
Dynamic characteristics
QGD gate-drain charge VGS =10V; ID =25A;
VDS = 40 V; see Figure 14;
see Figure 15
-5-nC
QG(tot) total gate charge - 20 - nC