Philips Semiconductors Product specification
 
 N-channel TrenchMOS transistor PSMN030-150P
FEATURES SYMBOL QUICK REFERENCE DATA
• ’Trench’ technology
• Very low on-state resistance VDSS = 150 V
• Fast switching
• Low thermal resistance ID = 55.5 A
RDS(ON)
 ≤ 30 mΩ
GENERAL DESCRIPTION
SiliconMAX products use the latest Philips Trench technology to achieve the lowest possible on-state resistance in
each package at each voltage rating.
Applications:-
• d.c. to d.c. converters
• switched mode power supplies
The PSMN030-150P is supplied in the SOT78 (TO220AB) conventional leaded package.
PINNING SOT78 (TO220AB)
PIN DESCRIPTION
1 gate
2 drain
3 source
tab drain
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDSS Drain-source voltage Tj
 = 25 ˚C to 175˚C - 150 V
VDGR Drain-gate voltage Tj
 = 25 ˚C to 175˚C; RGS = 20 kΩ - 150 V
VGS Gate-source voltage - ± 20 V
ID Continuous drain current Tmb = 25 ˚C - 55.5 A
Tmb = 100 ˚C - 39 A
IDM Pulsed drain current Tmb = 25 ˚C - 222 A
PD Total power dissipation Tmb = 25 ˚C - 250 W
Tj
, Tstg Operating junction and - 55 175 ˚C
storage temperature
d
g
s
123
tab